Silicon Semiconductor Technology

Customer Centric Agility

Market success for power and sensor semiconductors is closely tied to the best figures of merit (FOM), which is enabled by process technology differentiation. To best support our customers, Polar offers three distinct engagement models:

Standard Process Offerings With a Polar-Qualified PDK: Includes BCD, GaN, BiPolar, BiCMOS, & MOSFET.
Joint Development: Build off Polar’s core competencies with customer-defined innovation.
Process Transfer: Copy the exact process, aligned/optimized to fab capabilities from IDM or Foundry.

Technology Offerings

Polar offers a variety of technology offerings spanning from discrete to integrated circuit (IC) and now Gallium Nitride (GaN). Polar supports AEC-Q100 automotive qualifications and offers automotive-specific processing flows at customer request.

Low-Voltage BCD

0.18μm BCD (Bipolar-CMOS-DMOS)
Dual gate oxide platform: 1.8V (40Å) and 5V (110Å) transistors
Scalable high-voltage devices: LDMOS up to 60V; Guard ring libraries enabling up to 140V
Rich device portfolio: CMOS, BJTs, resistors, capacitors, diodes, varactors, and ESD structures
Low Rdson LDMOS using local oxidation (LOX) and sulfur oxide (SOX) modules
Advanced metallization: Up to 4 AlCu metal layers plus thick top metal (2.8μm) for power routing
Robust reliability: -40°C to +125°C standard; HV devices tested to +150°C
PDK available on request

High-Voltage BCD

0.5 μm (FEOL), 0.3 μm (BEOL)
Dual gate oxide platform (180Å, 800Å)
CMOS 5-30V, BiPolar 7-40V
LDMOS up to 900V
22 mask layers with 2-layer metal
Robust reliability: -40°C to +125°C standard; HV devices tested to +150°C
Automotive-ready: ISO 26262 guidelines and automotive support layers included
In production. PDK available in Q2 2026.

40V BiCMOS

0.5 μm (FEOL and BEOL)
Devices rated for 5 V, 7 V, 16 V, 30 V, and up to 40 V
NMOS/PMOS, HV MOSFETs, BJTs, diodes, capacitors, resistors
2 metal layers standard; 3-layer interconnects & thick metal options
Low RDS(on) NMOS, Low-Vt NMOS, ESD devices (5–40 V).
In production. Full PDK, models, and design manuals available.

30V BiPolar

30V Operation
Customizable modular process options for optimal cost/performance
Junction Isolation
Complementary Bipolar with complete NPN and PNP transistor family
Qualified from -50°C to +200°C
In production. Full PDK, models, and design manuals available.

MOSFET

40-100V MOSFET:

Split-gate trench MOSFET
Automotive grade
Diode option
In production. PDK available in Q1 2026.

High-Voltage MOSFET:

Capability up to 400V
Option for custom development or process transfer

IGBT

Trench-based rated to 650, 700, 750V, 1200V
7-10 masking layers
Optional poly resistor
Epi and floating zone substrate
Option for custom development or process transfer

650V Gallium Nitride (GaN)

High voltage (650V) high electron mobility transistor (HEMT) technology
Widely deployed GaN-on-Si cascode capable technology
Superior temperature coefficient of resistance and lower dynamic to static on-resistance ratio enable higher operating efficiencies
High saturation current enables higher power density and reliability with smaller devices
Simple, low-cost MOSFET SiO2 gate interface allows compatibility with silicon-based drivers and controllers
Key processing capabilities, including Atomic Layer Deposition (ALD), Atomic Force microscopy (AFM), and Chemical Mechanical Polishing (CMP)
Design Manual available now

Technology Nodes

Polar Semiconductor Technology Nodes

Technology Breadth & Depth

Polar Semiconductor Technology Breadth & Depth

Polar Technology Applications

Polar is at the epicenter of strong demand for power semiconductors, driven by secular growth drivers (electrification, automation, etc.) in three distinct vertical markets.