Silicon Semiconductor Technology

Customer Centric Agility

Market success for power and sensor semiconductors is closely tied to the best figures of merit (FOM), which is enabled by process technology differentiation. To best support our customers, Polar offers three distinct engagement models:

Standard Process Offerings With a Polar-Qualified PDK: Includes BCD, GaN, BiPolar, BiCMOS, & MOSFET.
Joint Development: Build off Polar’s core competencies with customer-defined innovation.
Process Transfer: Copy the exact process, aligned/optimized to fab capabilities from IDM or Foundry.

Technology Offerings

Polar offers a variety of technology offerings spanning from discrete to integrated circuit (IC) and now Gallium Nitride (GaN). Polar supports AEC-Q100 automotive qualifications and offers automotive-specific processing flows at customer request.

IC Technology

BiCMOS and BCD Processes.

Polar Semiconductor manufactures low voltage advanced sensors and high voltage BCD products with LDMOS up to 1200V. These IC’s (integrated circuits) have various isolation schemes (LOCOS/DTI/JI) and are used in automotive, commercial and industrial applications.

Discrete and IGBT Technology

650V to 750V IGBT

Polar Semiconductor has 650V to 750V IGBTs in production that are trench-gate, field-stop, and industry-competitive. We are also developing the next generation of IGBT (insulated-gate bipolar transistor) technology with cutting-edge Vcesat-Eoff tradeoff.

40V to 100V power MOSFETS

Polar Semiconductor has developed a small pitch, trench-gate structure to create their latest generation of split-gate power MOSFETs. These state-of-the-art MOSFETs (metal-oxide-semiconductor field-effect transistor) are competitive with the industry’s best for low-gate charge and low on-resistance, making them suitable for a wide range of industrial applications.

PPRT™

Our development and transfer service includes an established combination of technical and business processes to verify that new and derivative process flows are transferred precisely and rapidly. Known as Polar Precise and Rapid Transfer (PPRT™), this process involves a comprehensive gap analysis completed by cross-functional (business, engineering, and manufacturing) teams to evaluate challenges with technology, process, cost, and schedule.

Broad Process Technology Portfolio

The table below shows some of our select silicon technology offerings with example applications:

Technology	Description
40V MOSFET	Split-gate Trench MOSFET (40V) Best-in-class FOM RSP and REL Automotive grade 2.5V Vt 2 different process flows with a Diode option
100V MOSFET	Split-gate Trench MOSFET (100V) Best-in-class FOM RSP and REL Automotive grade 1.5 V/3.0V Vt 2 different process flows with a Diode option
650V IGBT	Trench process >= 2.4um MESA Commercial grade for IPMs
700 & 750V IGBT	FS-IGBT process >= 1.8um MESA Automotive grade for main inverters
High-V ICs	BCD process LOCOS/DTI/JI Automotive/commercial/industrial applications >= 0.18 um node Primary node = 0.35 um 5-15V Logic EPI Trench Thick passivation PBO Backgrind/backmetal
Low-V ICs	BiCMOS Advanced sensors LOCOS/DTI/JI Automotive grade >=0.18 um node Primary node = 0.25 um EPI Trench 3 layer metal

Polar Technology Applications

Polar is at the epicenter of strong demand for power semiconductors, driven by secular growth drivers (electrification, automation, etc.) in three distinct vertical markets.